黄东

个人简介

黄东,男,汉族,1988年8月出生,中共党员,2006-2010年就读于合肥工业大学微电子专业,获理学学士;2010年进入中国科学技术大学师从林福江教授攻读博士学位,主要研究先进射频、模拟集成电路设计,并于2015年获电路与系统专业博士。

目前以一作发表SCI论文3篇,EI和中文核心论文数篇,合作发表SCI/EI论文十余篇,持有中国发明专利2项。现主持陕西省科技厅和教育厅项目各1项,主持横向项目3项,和包括航空631所在内的多家企业建立了深度合作关系。主要社会兼职:Electrical Engineering、AEU-International Journal of Electronics and Communications、Microsystem Technologies等SCI期刊审稿人。


研究方向

主要研究方向为传感器模拟信号调理电路、无线通信射频收发机、模拟数字转换电路(AD/DA)、DC-DC电源设计等。


教学方向

开设本科生课程:模拟电子技术基础、模拟集成电路设计;

开设研究生课程:射频微电子学。


科研项目

1.黄东(主持)等,2022/06-2024/06,高精度模数转换器关键技术研究,中国航空631所横向项目;

2.黄东(主持)等,2020/01-2022/12,基于有源反馈的片上宽带可重构射频接收机带外干扰抑制技术研究,陕西省自然科学基金一般项目-青年项目;

3.黄东(主持)等,2019/08-2021/08,4-20mA电流发送器模块技术研究,中国航空631所横向项目;

4.黄东(主持)等,2018/10-2020/10,宽带可重构射频接收机抗干扰技术研究与电路实现,陕西省教育厅专项科研计划项目;

5.黄东(主持)等,2018/01-2020/06,高精度电流变送器芯片关键技术研发,中国航空631所横向项目。


发表论文

1.Dong Huang, Xiaofeng Yang, Haifeng Chen, M. I.Khan, Fujiang Lin,“A 0.3-3.5 GHz Active-Feedback Low-Noise Amplifier with Linearization Design for Wideband Receivers,” AEU-International Journal of Electronics and Communications, 2018. (SCI)

2.M. I. Khan, R. Shoukat, K. Mukherjee, and H. Dong, “Analysis of harmonic contents of switching waveforms emitted by the ultra high speed digital CMOS integrated circuits for use in future micro/nano systems applications,” Microsystem Technologies, pp. 1-6,2017.(SCI)

3.M. I. Khan,H. Dong, and etc. “Embedded Passive Components in Advanced 3D chips and micro/nano Electronic Systems,” Microsystem Technologies, 2017. (SCI)

4.D. Huang, S. Diao, W. Qian, and F. Lin, “A resistive-feedback LNA in 65nm CMOS with a gate inductor for bandwidth extension,” Microelectronics Journal, vol. 46, no. 1, pp. 103-110, 1, 2015.(SCI)

5.D. Huang, W. Qian, M. Khan, S. Diao, and F. Lin, “0.2–4.35 GHz highly linear CMOS balun-LNA with substrate noise optimization,” Analog Integrated Circuits and Signal Processing, vol. 83, no. 3, pp. 285-293, 2015. (SCI)


会议与工作论文

1.W. Qian, M. Khan,D. Huang, and F. Lin, “Analysis of Trapping Effect in GaN HEMT Modeling,” in IEEE International Microwave Workshop Series onAdvanced Materials and Processes for RF and THz Applications (IMWS-AMP), 2015. (EI)

2.M.Khan, W.Qian,D. Huang, L.Li, and F. Lin,“Enhanced GaN HEMT Large Signal Model with Self-Heating and Trapping Effects for High Power Amplifiers,”in IEEE International Microwave Workshop Serieson Advanced Materials and Processes for RF and THz Applications (IMWS-AMP), 2015. (EI)

3.Dong Huang, Guang Zhu, Peng Wei, Shengxi Diao and Fujiang Lin,“Building Blocks of A 60GHz Receiver for WPAN Applications”,第一届全国太赫兹科学技术与应用学术交流会,北京,2012。

4.F. Jia,D. Huang, S. Diao, Z. Fu, and F. Lin, “A digitally controlled PA with tunable matching network,”in IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), Singpore, 2012. (SCI)

5.D. Huang, S. Diao, P. Wei, and F. Lin, “A low-power 18-GHz dual-injectionlocked frequency divider in 65-nm CMOS,” in the 5th Global Symposium on Millimeter Waves (GSMM ), Harbin, 2012. (EI)


电子邮箱 huangdong@xupt.edu.cn


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